| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for measurement of an etching depth between photo-mask etching by alternative phase shifting in the semiconductor photo-mask processing system. <P>SOLUTION: The measuring apparatus for measuring the depth of etching in the etching process system is provided with a measuring cell connected with a main frame of the etching process system, an etching depth measuring device fixed on the bottom of the measuring cell, and an opening provided on the bottom of the measuring cell by which a light beam is made to be able to pass through between the etching depth measuring device and the substrate. The embodiment of this invention with regard to the method for preparing the alternative phase shifting mask is that the quarts substrate is etched partially to the initial etching depth while measuring the etched depth by integrative measuring device, then the etching and the measurement are repeated till the etching depth of the substrate arrives at the objective depth. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
