| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, a manufacturing method of the same and a flat panel display provided with the same. SOLUTION: The thin film transistor wherein the transistor is provided with a gate electrode, source and drain electrodes isolated from the gate electrode, a semiconductor layer which is isolated from the gate electrode and is electrically connected to the source and drain electrodes, and an insulating layer which isolates the gate electrode from the source and drain electrodes or semiconductor layer. The transistor is further provided with a carrier blocking layer which is interposed between the semiconductor and insulating layer, and prevents electrons or electron holes flowing through the semiconductor layer from being trapped in the insulating layer. The thin film transistor has a structure where the carrier blocking layer is interposed between the semiconductor layer and the insulating layer, and can solve a hysteresis behavior problem by preventing the electrons or electron holes injected into the semiconductor layer from being trapped in the insulating layer. This allows electrical characteristics such as electron mobility characteristics to be improved. COPYRIGHT: (C)2006,JPO&NCIPI
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