发明名称 |
Methods for making dual-damascene dielectric structures |
摘要 |
A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry. The etching is timed to etch through a partial thickness of the low dielectric constant layer and the first etch chemistry is optimized to a selected low dielectric constant material. The method further includes forming a via hole in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In a specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.
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申请公布号 |
US2006166485(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20060389428 |
申请日期 |
2006.03.23 |
申请人 |
LAM RESEARCH CORPORATION, AND NOVELLUS SYSTEMS, INC. |
发明人 |
UGLOW JAY E.;BRIGHT NICOLAS J.;HEMKER DAVE J.;MACWILLIAMS KENNETH P.;BENZING JEFFREY C.;ARCHER TIMOTHY M. |
分类号 |
H01L21/302;H01L21/4763;H01L21/3065;H01L21/314;H01L21/316;H01L21/768 |
主分类号 |
H01L21/302 |
代理机构 |
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地址 |
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