| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a variable resistance element wherein a change in resistance is generated by a power pulse, as well as a nonvolatile memory element using the same wherein a memory information is hard to be eliminated even if the power supply of the element is turned off, which reduces a variation of characteristic in the variable resistance element, and which improves reliability by orienting a perovskite oxide as a variable resistance material on (001) plane of rhombohedral and hexagonal system in priority. <P>SOLUTION: A variable resistance layer 15 is formed on a first electrode film 14, and a second electrode 16 is formed on the variable resistance layer 15. The variable resistance layer 15 is made of a rhombohedral perovskite oxide, and it is oriented in priority in the direction of (001) plane of the hexagonal system. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
