发明名称 METHOD OF DETERMINATION OF NANOMETRIC RELIEF OF SUBSTRATE
摘要 FIELD: determination of nano-range relief of substrate. ^ SUBSTANCE: substrate is made of dielectric or semiconductor material. Basic probe is installed at angle of 55-65° to substrate. Additional probe is introduced and installed at angle of 55-65° to substrate and at angle of 55-65° to basic probe. Additional and basic probes are fastened at independent additional piezoelectric drives connected with main one. Distance between points of main and additional probes is adjusted till achieving tunnel gas. Current is measured in probe circuit between main and additional probes. ^ EFFECT: improved precision. ^ 1 dwg
申请公布号 RU2280853(C2) 申请公布日期 2006.07.27
申请号 RU20030104225 申请日期 2003.02.12
申请人 GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSINAL'NOGO OBRAZOVANIJA MOSKOVSKIJ GOSUDARSTVENNYJ INSTITUT EHLEKTRONIKI I MATEMATIKI (TEKHNICHESKIJ UNIVERSITET) 发明人 IVASHOV EVGENIJ NIKOLAEVICH;STEPOCHKIN ANDREJ ANDREEVICH;KUZ'KIN VLADIMIR IVANOVICH
分类号 G01Q60/10;H01J37/28 主分类号 G01Q60/10
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