| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for verifying an electron-beam exposure pattern capable of rapidly verifying a pattern accurately. <P>SOLUTION: The method for verifying the electron-beam exposure pattern has a first step (S102) extracting a plurality of sample points on the outer periphery of the pattern contained in design data, a second step (S104) computing the exposure intensities of electron-beam exposures in each of a plurality of the sample points on the basis of drawing data, and a third step (S106) deciding whether or not there are the exposure intensities obtained in each of a plurality of the sample points within a tolerance. In the method, the extraction of the sample points is carried out on the basis of at least either of information regarding the density and size of the pattern contained in the design data, distances among the adjacent patterns, and a beam blur related to the pattern in the second step (S102). Such a method for verifying the electron-beam exposure pattern is provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
