SiC SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an SiC semiconductor element capable of reducing the occurrence of element destruction when reverse voltage is applied. SOLUTION: A low concentration layer 102 composed of low concentration n-type SiC is formed on one surface of a high concentration layer 101 composed of high concentration n-type SiC. An embedded layer 103 composed of n-type SiC is formed in the low concentration layer 102 so as to make contact with the high concentration layer 101. A guard ring region 104 composed of p-type SiC is formed in the surface region of the low concentration layer 102. A Schottky electrode 120 is formed on the low concentration layer 102 and the guard ring region 104. An ohmic electrode 121 is formed on the other surface of the high concentration layer 101. COPYRIGHT: (C)2006,JPO&NCIPI