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发明名称
MEMORY TRANSISTOR AND MEMORY ELEMENT WITH AN ASYMMETRICAL POCKET DOPING REGION
摘要
申请公布号
EP1683200(A1)
申请公布日期
2006.07.26
申请号
EP20040791285
申请日期
2004.10.22
申请人
INFINEON TECHNOLOGIES AG
发明人
GEISSLER, CHRISTIAN;SCHULER, FRANZ;SHUM, DANNY PAK-CHUM
分类号
H01L27/11;G11C16/04
主分类号
H01L27/11
代理机构
代理人
主权项
地址
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