发明名称 Offset compensated sensing for magnetic random access memory
摘要 An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential amplifier. The compensation circuit of the differential amplifier includes a compensation capacitor that stores a compensation voltage during a calibration phase, and applies the stored compensation voltage to a compensation input of the compensation circuit of the amplifier during a measurement phase. Feedback from a source of the transistor controls the output of the differential amplifier to maintain a standard voltage across a resistive memory element connected to the source during measurement of the resistance of the resistive memory element, and the compensation circuit improves the accuracy of the voltage across the resistive memory element by compensating for an offset voltage of the differential amplifier.
申请公布号 US7082045(B2) 申请公布日期 2006.07.25
申请号 US20050133236 申请日期 2005.05.20
申请人 MICRON TECHNOLOGY, INC. 发明人 BAKER R. JACOB
分类号 G11C17/02;G11C7/02;G11C7/06;G11C11/16 主分类号 G11C17/02
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