METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improved mobility in a TFT by improving planarity, and to decrease an off current in the TFT. SOLUTION: A method includes a process for forming a semiconductor film having an amorphous structure on a substrate; a process for adding a metal element for accelerating crystallization on the semiconductor film; a process for performing heat treatment to set the semiconductor film to be a semiconductor film in a crystal structure; a process for irradiating the semiconductor film in the crystal structure with first laser beams; and a process for irradiating the semiconductor film in the crystal structure with second laser beams. Two laser beam irradiation processes are provided, thus improving the planarity of the semiconductor film in the crystal structure. As a result, it is made possible to improve the mobility in the TFT and to reduce the off current in the TFT. COPYRIGHT: (C)2006,JPO&NCIPI