| 摘要 |
The formation of a MIM (metal insulator metal) capacitor ( 164 ) and concurrent formation of a resistor ( 166 ) is disclosed. A copper diffusion barrier ( 124 ) is formed over a copper deposition ( 110 ) that serves as a bottom electrode ( 170 ) of the capacitor ( 164 ). The copper diffusion barrier ( 124 ) mitigates unwanted diffusion of copper from the copper deposition ( 110 ), and is formed via electro-less deposition such that little to none of the barrier material is deposited at locations other than over a top surface ( 125 ) of the deposition of copper/bottom electrode. Subsequently, layers of dielectric ( 150 ) and conductive ( 152 ) materials are applied to form a dielectric ( 172 ) and top electrode ( 174 ) of the MIM capacitor ( 164 ), respectively, where the layer of conductive top electrode material ( 152 ) also functions to concurrently develop the resistor ( 166 ) on the same chip as the capacitor ( 164 ).
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