| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory and its manufacturing method which has good characteristics as a transistor forming a memory element in a DRAM and is suited to the refining. <P>SOLUTION: The semiconductor memory comprises a semiconductor substrate 11, element isolating regions 28 on the substrate 11, element forming regions 30 having protrusions between the element isolating regions 28 on the semiconductor substrate 11, transistors Tra having channels formed on the protrusions of the element forming regions 30, and capacitors Ct, Cs connected to the transistors Tra in or on the semiconductor substrate. The protrusion of the element forming region 30 has a first and second slopes mutually facing along the width of the channel of the transistor Tra, and an upside formed between the first and second slopes. The upside has a width of 60 nm or less in the channel widthwise direction, and the vertex angle is scute as defined by the extensions of the first and second slopes. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
