| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory configured to eliminate the failure accompanying writing by eliminating the need for writing information to a reference voltage generation circuit and to prevent a change in characteristics with lapse of time without losing the advantage that follows up the fluctuation in the memory cell characteristics by the variation in reference voltage in manufacturing. <P>SOLUTION: The memory cell 111 is provided with a floating gate 103, a control gate 105 and a select gate 107 and the reference voltage generation circuit 1' comprises a pseudo cell 1 which is not equipped with the floating gate 103 and the control gate 105 of the memory cell 111 and is equipped with a gate 13 corresponding to the select gate 107. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
