SEMICONDUCTOR ELEMENT HAVING FACET CHANNEL AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element having a facet channel and its manufacturing method.

SOLUTION: The semiconductor element includes a semiconductor substrate having first and second active regions. The first and the second active regions have first and second main surfaces, respectively, and the first and the second main surfaces have first crystal orientations. There is provided a facet epitaxial semiconductor structure grown from the second main surface. The facet epitaxial semiconductor structure includes at least one facet having a second crystal orientation. A gate dielectric layer is formed on the first main surface and the facet epitaxial semiconductor structure. A first gate electrode is located on the gate dielectric layer on the first main surface, and a second gate electrode is located on the gate dielectric layer on the facet epitaxial semiconductor structure.

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