| 摘要 |
There has been a problem of damaging a diffusion layer 4 occasionally in etching of a nitride film 5 in a wide gate pitch P 1 region. First, a plurality of diffusion layers 4 , gates 2 and sidewalls 3 are formed on a silicon substrate 1 , so as to be adjacent to each other. Next, a nitride film 5 is stacked on the diffusion layers 4 , the gates 2 and the sidewalls 3 , so that the surface of the film reaches a level higher than the top surface of the gates 2 , and so as to fill up the entire portion of gaps in a narrow gate pitch P region. Next, the surface of the nitride film 5 is planarized, and further on the nitride film 6 , an insulating oxide film 6 is stacked. Contact holes 7 are then formed, and a connection plug 8 is formed in each of the holes.
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