| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered compact which can be used for manufacturing an amorphous transparent electroconductive thin film having low specific resistance, smooth surface, and high light transmittance in the visible light region. <P>SOLUTION: The oxide sintered compact comprises indium (In), tungsten (W), zinc (Zn), and germanium (Ge), wherein the atomic number ratio of W to In is 0.004-0.023, the atomic number ratio of Zn to In is 0.004-0.032, and the atomic number ratio of Ge to In is 0.004-0.021, and has a specific resistance of ≤1 kΩ×cm. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
