| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device requiring no thermal treatment at a high temperature in forming a lower electrode having an uneven surface when forming a capacitive element of a MIM (Metal-Insulator-Metal) structure. <P>SOLUTION: The manufacturing method of the semiconductor device includes a step of forming the lower electrode 20 having a step of depositing Co on the surface of a capacitive element storage hole 18 by a sputtering method at a substrate temperature of 400°C to form a Co film 19 having an uneven surface, and a step of forming the lower electrode 20 made of titanium nitride over the Co film 19. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
