| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor in which the dead zone and the dark current characteristics can be enhanced simultaneously using a selective epitaxial growth process, and to provide its fabrication process. SOLUTION: The CMOS image sensor comprises a first conductivity type semiconductor substrate where a photodiode region and a transistor region are sectioned, a second conductivity type impurity region being formed in the photodiode region of the semiconductor substrate, a gate electrode being formed on the semiconductor substrate in the transistor forming region, an insulating film being formed on the entire surface of the semiconductor substrate including the gate electrode excepting the upper side of the second conductivity type impurity region, and a silicon epitaxial layer being formed on the upper side of the second conductivity type impurity region and doped with first conductivity type impurities. COPYRIGHT: (C)2006,JPO&NCIPI
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