| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which prevents the driving power of a high-voltage transistor from deteriorating even when low- and high-voltage transistors are mixed and mounted. SOLUTION: The semiconductor device has a first n-type source/drain region 48a and a second p-type source/drain region 48b on a silicon substrate 20 with leaving a first spacing W4 from the side faces of a first and a second gate electrodes 39a, 39b, a second n-type source/drain region 48c and a first p-type source/drain region 48d on the silicon substrate 20 with leaving a second spacing W3 wider than the first spacing W4 from the side faces of a third and fourth gate electrodes 39c, 39d, and a third and fourth insulating side walls 43c, 43d extending from the upside edges of the third and fourth gate electrodes 39c, 39d onto source/drain extensions 42c, 42d at their sideways. Its manufacturing method is disclosed. COPYRIGHT: (C)2006,JPO&NCIPI
|
