发明名称 |
LASER PLASMA EUV LIGHT SOURCE, TARGET MEMBER, PRODUCTION METHOD FOR TARGET MEMBER, TARGET SUPPLYING METHOD, AND EUV EXPOSURE SYSTEM |
摘要 |
<p>Targets (1) are jetted with their disc directions aligned from a nozzle (2) having a slit-form opening. Targets (1) are carried along on a gas flow. In this example, He gas is used. Targets (1) may be jetted by vibrating the nozzle (2) with a piezoelectric element. Since the outside of the nozzle (2) is kept highly vacuum, targets (1) jetted from the nozzle (2) reach a laser beam irradiation position with their postures kept as they are. In synchronization with the supply of targets (1), a pulse laser beam (5) from a Nd:YAG laser light source (4) is condensed at a lens (3) and applied to targets (1). The spot diameter of laser is 1mm, the same as the diameter of a target (1), and its thickness is up to 1000nm. Accordingly, almost all targets are turned into plasma, thus preventing debris from occurring and enhancing a conversion efficiency.</p> |
申请公布号 |
WO2006075535(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
WO2005JP24221 |
申请日期 |
2005.12.27 |
申请人 |
NIKON CORPORATION;MURAKAMI, KATSUHIKO;INOUE, HIDEYA |
发明人 |
MURAKAMI, KATSUHIKO;INOUE, HIDEYA |
分类号 |
H01L21/027;G03F7/20;G21K5/08;H05G2/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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