SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of suppressing deterioration in light-emitting efficiency.

SOLUTION: A light-emitting structure is formed on a substrate composed of a semiconductor or an insulator. This light-emitting structure has a laminate structure in which both the top and bottom of an active layer composed of a semiconductor are sandwiched by a pair of cladding layers each composed of a semiconductor. The cladding layers are each formed of a semiconductor having a band gap wider than energy equivalent to a peak wavelength of an EL spectrum of the active layer. A carrier trap layer is arranged between the substrate and the light-emitting structure. The peak wavelength of the EL spectrum of the carrier trap layer is the longer wavelength equivalent to the band gap of the substrate and than the peak wavelength of the EL spectrum of the active layer. An electrode is formed for injecting a current into the active layer.

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