| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor using an organic semiconductor having little characteristic changes by a light and having an excellent light resistance. <P>SOLUTION: The thin-film transistor has a semiconductor layer, a gate insulating film formed to the upper section of the semiconductor layer and a gate electrode formed to the upper section of the insulating film. In the thin-film transistor, a reflecting insulating layer composed of a material having a refractive index higher than the semiconductor layer and having light reflecting characteristics is used as the gate insulating film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
