发明名称 MOS TRANSISTOR HAVING SATURATED CURRENT INSENSIBLE TO TEMPERATURE AND CONSTANT-VOLTAGE GENERATOR USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a MOS transistor insensible to a temperature, and to provide a constant-voltage generator which is embodied from the MOS transistor insensible to a temperature and is stable to a temperature change without using a temperature compensating resistor. SOLUTION: In this MOS transistor, the number of source contacts is adjusted for increasing a source contact resistance, and the number of source contacts is smaller than the number of drain contacts. Further, for compensating for decreasing a current value between a desired source and drain by increasing the contact resistance of the source contact, the ratio of a width to the length of a gate is adjusted, and the ratio of a width is increased to the length of the gate. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006190946(A) 申请公布日期 2006.07.20
申请号 JP20050169957 申请日期 2005.06.09
申请人 HYNIX SEMICONDUCTOR INC 发明人 CHOI JUN-GI;HAN HI-HYUN
分类号 H01L29/78;H01L21/822;H01L21/8234;H01L21/8238;H01L27/04;H01L27/088;H01L27/092 主分类号 H01L29/78
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