| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the central section of a wafer 50 is thickened or thinned asymmetrically, and the uniformity of a polishing in a subsequent chemical mechanical polishing process is deteriorated when an insulating film is deposited by a high-density plasma chemical vapor deposition. SOLUTION: A high-density plasma chemical-vapor deposition device has an evaporating chamber composed of an upper chamber 130 and a lower chamber 120, an electrostatic chuck 140, which is installed to the lower section of the evaporating chamber, to which a high-frequency power supply is applied and on which the wafer 150 is placed, and a large number of injectors 160 for injecting a source gas for the chemical vapor deposition, being fixed on a side wall in the evaporating chamber and being arranged at specified intervals to a horizontal plane. The device further has an angle adjusting means 170 adjusting the angles of inclination of a large number of the injectors 160 and a control means 180 controlling the high-density plasma chemical-vapor deposition device and adjusting the angles of inclination of the injectors 160 by the angle adjusting means 170. COPYRIGHT: (C)2006,JPO&NCIPI
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