SEMICONDUCTOR THIN FILM MANUFACTURING METHOD AND SEMICONDUCTOR THIN FILM MANUFACTURING APPARATUS
摘要
<p>A method for manufacturing a semiconductor thin film by melting a solid precursor semiconductor thin film (6) contained in a precursor semiconductor thin film substrate (5) by irradiation of at least two types of laser beams and then by recrystallizing it. The semiconductor thin film manufacturing method includes a step of controlling at least one of groups composed of energy density, irradiation timing and irradiation time of at least one of at least two types of laser beams, based on an energy density change of a reflection light of a reference laser beam applied on the precursor semiconductor thin film substrate (5). An apparatus (10) for manufacturing the semiconductor thin film is also provided.</p>
