| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device where a macro size is suppressed to be small, and higher integration is realized. SOLUTION: The non-volatile semiconductor storage device is provided with a semiconductor substrate 1 and a plurality of memory cells 10a and 10b. The semiconductor substrate 1 has a plurality of grooves 6. Two or above memory cells 10a and 10b are arranged in sides 17a and 17b in a depthwise direction of the groove 6 along the inner face of the groove 6. A plurality of memory cells 10a and 10b may have first diffusion layers 7 and 9a functioning as sources, and second diffusion layers 9a and 8 functioning as drains. Height in the depthwise direction in the grooves 6 in the first diffusion layers 7 and 9a differs from that of the second diffusion layers 9a and 8. COPYRIGHT: (C)2006,JPO&NCIPI
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