| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device including an uneven structure and a method of manufacturing the device. <P>SOLUTION: A method of manufacturing a semiconductor light emitting device includes (a) a step of forming a first semiconductor layer 22 on a substrate 21, (b) a step of forming a substance layer on the first semiconductor layer 22, then performing heat treatment to allow a substance in the substance layer to penetrate into the first semiconductor layer 22 so that the first semiconductor layer 22 is formed into an uneven structure, and (c) a step of forming a second semiconductor layer 24 on the first semiconductor layer 22. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
