发明名称 |
Memory device including dendrimer |
摘要 |
A memory device including an organic material layer between an upper electrode and a lower electrode. The organic material layer includes a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it shows a nonvolatile property, has high integration density and low power consumption characteristics, and may be inexpensively fabricated through a simple process.
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申请公布号 |
US2006157691(A1) |
申请公布日期 |
2006.07.20 |
申请号 |
US20050318533 |
申请日期 |
2005.12.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SANG K.;JOO WON J.;KIM CHUL H.;KANG YOON S. |
分类号 |
H01L29/08 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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