发明名称 NANOSTRUCTURE-BASED TRANSISTOR
摘要 <p>Nanotube-based transistors and methods for implementing such nanotube-based transistors are provided. More particularly, systems and methods are provided for implementing a first electrode that subsumes a catalyst region from which nanostructures, such as nanotubes, are grown, and an annular second electrode around the first electrode, wherein at least one of the nanostructures couples the first and second electrodes. According to one embodiment, a catalyst region is disposed on a substrate, and the catalyst region may be patterned into a desired shape/size. Carbon nanotubes are grown from the catalyst region. First and second electrodes are then deposited, where the first electrode covers the catalyst region and the annular second electrode is disposed around the first electrode. In one embodiment, the second electrode is circular and concentric with the first electrode. At least one of the carbon nanotubes couples the first and second electrodes.</p>
申请公布号 WO2006076044(A2) 申请公布日期 2006.07.20
申请号 WO2005US27336 申请日期 2005.07.29
申请人 AGILENT TECHNOLOGIES, INC.;KOPLEY, THOMAS, E.;LU, JENNIFER;MOLL, NICOLAS, J.;HUESCHEN, MARK, R. 发明人 KOPLEY, THOMAS, E.;LU, JENNIFER;MOLL, NICOLAS, J.;HUESCHEN, MARK, R.
分类号 H01L21/44 主分类号 H01L21/44
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