发明名称 HYBRID MULTI-BIT NONVOLATILE MEMORY ELEMENT AND ITS OPERATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a hybrid multi-bit nonvolatile memory element. <P>SOLUTION: A nonvolatile memory element is provided with a first memory section provided with a first storage node capable of storing data by a first method, and a second memory section provided with a second storage node capable of storing data by a second method different from that of the first memory section. The first memory section and the second memory section share a source and a drain, and capable of multi-bit operation of 2 bits or more. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006191033(A) 申请公布日期 2006.07.20
申请号 JP20050367063 申请日期 2005.12.20
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK YOON-DONG;KIM WOO-JOO;JEON SANG-HUN
分类号 H01L27/10;H01L21/8247;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L27/10
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