发明名称 |
HYBRID MULTI-BIT NONVOLATILE MEMORY ELEMENT AND ITS OPERATION METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a hybrid multi-bit nonvolatile memory element. <P>SOLUTION: A nonvolatile memory element is provided with a first memory section provided with a first storage node capable of storing data by a first method, and a second memory section provided with a second storage node capable of storing data by a second method different from that of the first memory section. The first memory section and the second memory section share a source and a drain, and capable of multi-bit operation of 2 bits or more. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006191033(A) |
申请公布日期 |
2006.07.20 |
申请号 |
JP20050367063 |
申请日期 |
2005.12.20 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK YOON-DONG;KIM WOO-JOO;JEON SANG-HUN |
分类号 |
H01L27/10;H01L21/8247;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|