发明名称 Integrated circuit memory devices and capacitors having carbon nanotube electrodes and methods of forming same
摘要 An integrated circuit capacitor includes first and second electrodes and at least one dielectric layer extending between the first and second electrodes. The first electrode includes at least one carbon nanotube. The capacitor further includes an electrically conductive catalyst material. This catalyst material may be selected from the group consisting of iron, nickel and cobalt and alloys thereof.
申请公布号 US2006157771(A1) 申请公布日期 2006.07.20
申请号 US20050205253 申请日期 2005.08.16
申请人 CHOI YOUNG-MOON;YEO IN-SEOK;LEE SUN-WOO 发明人 CHOI YOUNG-MOON;YEO IN-SEOK;LEE SUN-WOO
分类号 H01L29/94;H01L21/8242 主分类号 H01L29/94
代理机构 代理人
主权项
地址
您可能感兴趣的专利