发明名称 |
METHOD OF FORMATION OF SINGLE-CRYSTAL SI TFT CHANNEL REGION |
摘要 |
<p>A method of forming a high quality channel region of a TFT by forming a large size monocrystalline silicon thin film using a patterned metal mask and a grain boundary filtering region is provided. The method includes sequentially stacking a first buffer layer and an amorphous silicon layer on a substrate, forming a first silicon region in which crystallization begins, a second silicon region having a width smaller than a width of the first silicon region and located on a central portion of a side of the first silicon region, and a third silicon region having a width than greater the width of the second silicon region and contacting the second silicon region, forming a metal mask partly on the first silicon region, and crystallizing the amorphous silicon layer by cooling the amorphous silicon layer after melting the entire amorphous silicon layer except for a portion of the amorphous silicon layer under the metal mask by radiating laser beams to the patterned amorphous silicon layer.</p> |
申请公布号 |
KR20060082620(A) |
申请公布日期 |
2006.07.19 |
申请号 |
KR20050003193 |
申请日期 |
2005.01.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOHANS, SE YOUNG;TAKASHI NOGUCHI;KIM, DO YOUNG |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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