发明名称 |
Strained-channel semiconductor structure and method of fabricating the same |
摘要 |
A strained-channel semiconductor structure and method of fabricating the same. The strained-channel semiconductor structure comprises a substrate composed of a first semiconductor material with a first natural lattice constant. A channel region is disposed in the substrate and a gate stack is disposed over the strained channel region A pair of source/drain regions are oppositely disposed in the substrate adjacent to the channel region, wherein each of the source/drain regions comprises a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant rather than the first natural lattice constant, an inner side and an outer side corresponding to the gate stack, and at least one outer sides laterally contacts the first semiconductor material of the substrate.
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申请公布号 |
US7078742(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20030655255 |
申请日期 |
2003.09.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN CHUN-CHIEH;YEO YEE-CHIA |
分类号 |
H01L31/0312;H01L21/336;H01L21/8234;H01L27/12;H01L29/08;H01L29/51;H01L29/76;H01L29/78;H01L31/0392 |
主分类号 |
H01L31/0312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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