发明名称 Memory system using simultaneous bi-directional input/output circuit on an address bus line
摘要 A memory system using a simultaneous bi-directional input/output (SBD I/O) circuit on an address bus line. The memory system includes a first address I/O circuit and a second address I/O circuit, which are connected by the address bus line. The first address I/O circuit may be included in a controller, transmits an address signal to the address bus line, and receives an acknowledgement signal from the address bus line. The second address I/O circuit may be included in a memory device (such as dynamic random access memory (DRAM)), transmits the acknowledgement signal to the address bus line, and receives the address signal from the address bus line. The memory system may also include an error correction circuit unit which generates the acknowledgement signal indicating if an error is present in the address signal received by the second address I/O circuit.
申请公布号 US7079444(B2) 申请公布日期 2006.07.18
申请号 US20040974951 申请日期 2004.10.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JUNG-BAE
分类号 G06F13/14;G11C8/00;G06F11/10;G06F13/16;G11C7/10;G11C8/06 主分类号 G06F13/14
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