发明名称 Semiconductor apparatus and communication apparatus
摘要 A first low noise amplifier (LNA 1 111 ) is provided with a control terminal ( 1115 ) for turning of/off the low noise amplifier (LNA 1 111 ). Power terminals of the low noise amplifier (LNA 1 111 ) and a second low noise amplifier (LNA 2 112 ) are commonly connected, and are connected to a power supply ( 10 ) via a power supply switch ( 1114 ). Ground terminals of the two amplifiers (LNA 1 111 ) and (LNA 2 112 ) are commonly connected, and a constant current source ( 1 115 ) is connected between the common terminal and the ground. The amplifiers (LNA 1 111 ) and (LNA 2 112 ) are turned on/off by switching the voltage applied to the control terminal ( 1115 ) of the first low noise amplifier (LNA 1 111 ) between a high potential and a low potential. The power supply switch ( 1114 ) is turned off during signal transmission. Therefore, an LNA block can be provided by using only one power supply switch ( 1114 ), whereby it is possible to reduce the number of devices from that in the prior art, thereby realizing a reduction in the size thereof.
申请公布号 US7079860(B1) 申请公布日期 2006.07.18
申请号 US20010913886 申请日期 2001.08.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMAMOTO SHINJI;MOTOYOSHI KANAME;FUKUMOTO SHINJI;HIDAKA KENICHI;WATANABE ATSUSHI
分类号 H04B1/06;H03D7/12;H03F1/32;H03F3/193;H03F3/68;H03F3/72 主分类号 H04B1/06
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