| 发明名称 |
Semiconductor device and fabrication method thereof |
| 摘要 |
A semiconductor device and fabrication thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
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| 申请公布号 |
US7078810(B2) |
申请公布日期 |
2006.07.18 |
| 申请号 |
US20040002331 |
申请日期 |
2004.12.01 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG GIN JIE;PENG CHAO-HSIEN;WU CHII-MING;CHANG CHIH-WEI;SHUE SHAU-LIN |
| 分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
| 代理机构 |
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