发明名称 Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
摘要 In advanced electrolytic polish (AEP) method, a metal wafer ( 10 ) acts as an anodic electrodes and another metal plate ( 65 ) is used as a cathodic electrode. A voltage differential is applied to the anode and cathode under a predetermined anodic dissolution current density. This causes a reaction that provides a planarized surface on the metal wafers. Additives are included in the electrolyte solution ( 55 ) which adsorb onto the wafer surface urging a higher removal rate at higher spots and a lower removal rate at lower spots. Also, in another embodiment of the present invention is a pulsed-electrolytic process ( 260 ) in which positive and negative potentials are applied to the anodic and cathodic electrodes alternately, further encouraging surface planarization. AEP can be used either as a first step followed by a mechanical polish or a second step between initial CMP polish and a third step mechanical polish. The present invention may also be added as a last step of copper electroplating process and so may be used in the manufacture of all kinds of patterned metal wafers.
申请公布号 US7077725(B2) 申请公布日期 2006.07.18
申请号 US20010949275 申请日期 2001.09.07
申请人 APPLIED MATERIALS, INC. 发明人 SUN LIZHONG;TSAI STAN;REDEKER FRITZ
分类号 B23H3/00;B24B1/00;B23H3/08;H01L21/304;H01L21/321 主分类号 B23H3/00
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