METHOD FOR PRODUCING FILM OF METAL CHALCOGENIDE, SUCH AS ZINC SULFIDE, ON A SUBSTRATE

摘要

The proposed method for producing film of metal chalcogenide, such as zinc sulfide, on a substrate implies using a reaction chamber with an inlet cuvette that is filled with chelated metalorganic chemical compound. The substrate is preliminarily heated to the specified temperature at which the metalorganic compound vapors decompose and then installed at the outlet of the reaction chamber. The method consists in heating the cuvette to the temperature of the evaporation of the metalorganic compound and passing carrier gas through the cuvette. As the carrier gas, steam is used. As the chelated metalorganic chemical compound, zinc dimethyldithiocarbamate is used.