发明名称 |
ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY |
摘要 |
Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system. |
申请公布号 |
WO2006074200(A2) |
申请公布日期 |
2006.07.13 |
申请号 |
WO2006US00141 |
申请日期 |
2006.01.04 |
申请人 |
AXCELIS TECHNOLOGIES, INC.;BENVENISTE, VICTOR;DIVERGILIO, WILLIAM;KELLERMAN, PETER |
发明人 |
BENVENISTE, VICTOR;DIVERGILIO, WILLIAM;KELLERMAN, PETER |
分类号 |
H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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