| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaSb phase change type recording film which is used for various phase change type recording media such as CD and DVD and excellent in the shelf stability of a recording mark, and a sputtering target for forming the GaAs phase change type recording film. <P>SOLUTION: The phase change type recording film contains Ga of 4 to less than 20% and further one or two or more kinds out of In, Sn and Bi of 0.2 to less than 5% in total, and the residual part of the film consists of an Sb group alloy having a composition of Sb and inevitable impurities. The target contains Ga of 5 to less than 20% and further one or two or more kinds out of In, Sn and Bi of 0.2 to less than 5% in total, and its residual part consists of the Sb group alloy having the composition of Sb and the inevitable impurities. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
