| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of reducing the influence of a read retention failure in a second nonvolatile memory when a first nonvolatile memory is accessed. <P>SOLUTION: The first nonvolatile memory is provided with a plurality of data storage areas and at least one redundant data storage area. The second nonvolatile memory stores a substitution address among a plurality of addresses in the plurality of data storage areas of the first nonvolatile memory. A sequencer reads all substitution addresses stored in the second nonvolatile memory to store them in a register group in response to an operation command. All the substitution addresses correspond to addresses of the at least one redundant data storage area. The first nonvolatile memory is accessed based on the result of comparison between an input address when the first nonvolatile memory is accessed and all the substitution addresses stored in the the register group. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
