发明名称 Developer composition for resists and method for formation of resist pattern
摘要 A developer composition for resists which has a high dissolution rate (high developing sensitivity). The developer composition for resists is a developer composition for resists, comprising an organic quaternary ammonium base as a main component and a surfactant, said surfactant containing an anionic surfactant represented by the following general formula (I): wherein at least one member of R<SUB>1 </SUB>and R<SUB>2 </SUB>represents an alkyl or alkoxy group having 5 to 18 carbon atoms and any reminder member represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least onemember of R<SUB>3</SUB>, R<SUB>4 </SUB>and R<SUB>5 </SUB>represents a group represented by the following general formula (II): [Chemical Formula 2] <?in-line-formulae description="In-line Formulae" end="lead"?>-SO<SUB>3</SUB>M (II) <?in-line-formulae description="In-line Formulae" end="tail"?> wherein M represents a metal atom, and any reminder member represents a hydrogen atom or a group represented by the above general formula (II).
申请公布号 US2006154158(A1) 申请公布日期 2006.07.13
申请号 US20050561802 申请日期 2005.12.22
申请人 WASHIO YASUSHI;SAITO KOJI 发明人 WASHIO YASUSHI;SAITO KOJI
分类号 G03C5/00;G03F7/32;H01L21/027 主分类号 G03C5/00
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