| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability wiring capable of restraining any void from happening in a via hole bottom in a semiconductor device including embedded wiring using a conductive film such as copper. SOLUTION: The semiconductor device comprises a first wiring layer 13 formed in a first insulating film 11, a second wiring layer formed in a second insulating film 16 formed on the first insulating film 11, and a via plug 18 formed in the second insulating film 16 for connecting the first wiring layer 13 and the second wiring layer. The first wiring layer 13 has a width of≥1μm, and an insulating dummy region 14 is formed in the first wiring layer 13 within 0.5μm from a connection between the via plug 18 and the first wiring layer 13. COPYRIGHT: (C)2006,JPO&NCIPI
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