发明名称 SOLID STATE IMAGE SENSOR AND ITS FABRICATION PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a solid state image sensor exhibiting excellent optical characteristics by enhancing light collection efficiency furthermore even in microfabrication and reducing leakage of incident light. SOLUTION: The solid state image sensor comprises a photoelectric converting section, a charge transfer section having an electrode for transferring charges generated at the photoelectric converting section, and an optical waveguide for introducing incident light to the photoelectric converting section while confining. The optical waveguide comprises a first translucent film formed on the photoelectric converting section and having a predetermined refractive index and a light guide function, and a second translucent film formed to surround the first translucent film and having a void layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006185947(A) 申请公布日期 2006.07.13
申请号 JP20040374681 申请日期 2004.12.24
申请人 FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD 发明人 HAYAKAWA TOSHIAKI;YASUUMI SADAJI;HACHITANI TORU
分类号 H01L27/14 主分类号 H01L27/14
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