Integrated semiconductor memory, for control circuits, has volatile memory cells refreshed with production and operating parameter data from non-volatile memory cells

摘要

Integrated semiconductor memory, with a non-volatile data storage, has an initial memory cell field (SF1) with volatile and non-volatile memory cells. A second memory cell field (SF2a) is composed entirely of volatile memory cells. The non-volatile cells of the first field are used to plot operating parameters while the memory is in use, where one parameter refreshes the volatile memory cells in the second field from storage in the non-volatile cells in the first field. The integrated semiconductor memory, with a non-volatile data storage, has an initial memory cell field (SF1) with volatile memory cells (SZT,SZC) and non-volatile cells (WZ). A second memory cell field (SF2a) is composed entirely of volatile memory cells. The non-volatile cells of the first field are used to plot operating parameters while the memory is in use, where one parameter refreshes the volatile memory cells in the second field from storage in the non-volatile cells in the first field. The integrated memory can store data in the volatile memory cells and hold production and parameter data in the non-volatile cells within the same control circuit. To input and read data at the two types of cells, the scanning amplifiers (SA) are each linked to external data connections (DQ) by a data bus (LDQ).