| 摘要 |
Method and apparatus for processing substrates are described. An apparatus for processing a substrate according to the present invention includes a source for processing the substrate. A sensor generates a sensor signal that is related to a state of the substrate. A source controller is coupled to the sensor and is coupled to the source. The source controller generates a control signal that is related to the sensor signal and that modifies at least one operating parameter of the plasma source during the processing of the substrate.
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