| 摘要 |
Methods to repair an APSM mask having undercut etch are described. An absorbing layer over a defect on the plate and a first portion of a defect on the plate are removed using a tip of an atomic force microscope. A second portion of the defect is removed using an e-beam induced etching, which includes introducing a first gas over a second portion of the defect to form a first chemistry to etch the defect, and dwelling the e-beam. The absorbing layer having an overhung structure is reconstructed on the plate using an e-beam induced deposition. A second gas is introduced over the plate to form a second chemistry to form an opaque material on the plate. The e-beam is dwelled for a predetermined time to induce forming the opaque material on the plate. For an embodiment, a profile of the defect is measured to control etching. |
