发明名称 In-process correction of stage mirror deformations during a photolithography exposure cycle
摘要 A microlithography method includes: interferometrically measuring information about a position of a microlithography stage with respect to each of multiple metrology axes during a photolithographic exposure cycle; analyzing the position information to determine correction factors indicative of a local slope on a side of the stage used to reflect an interferometric measurement beam and optical gradients caused by environmental effects produced by the photolithographic exposure cycle; and applying the correction factors to subsequent interferometric measurements of the stage.
申请公布号 US7075619(B2) 申请公布日期 2006.07.11
申请号 US20030734994 申请日期 2003.12.12
申请人 ZYGO CORPORATION 发明人 HILL HENRY A.
分类号 G03B27/42;G01B9/02;G01B11/02;G03B27/32;G03F7/20 主分类号 G03B27/42
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