发明名称 |
Writing circuit for a phase change memory device |
摘要 |
A memory device of a phase change type, wherein a memory cell has a memory element of calcogenic material switcheable between at least two phases associated with two different states of the memory cell. A write stage is connected to the memory cell and has a capacitive circuit configured to generate a discharge current having no constant portion and to cause the memory cell to change state.
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申请公布号 |
US7075841(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20040870694 |
申请日期 |
2004.06.16 |
申请人 |
STMICROELECTRONICS, S.R.L. |
发明人 |
RESTA CLAUDIO;BEDESCHI FERDINANDO;PELLIZZER FABIO;CASAGRANDE GIULIO |
分类号 |
G11C7/00;G11C11/34;G11C16/02;G11C16/10 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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