发明名称 |
Photoelectric conversion device |
摘要 |
A photoelectric conversion device capable of improving an open-circuit voltage is obtained. In this photoelectric conversion device, many of crystal grains contained in a third non-single-crystalline semiconductor layer have major axes substantially perpendicular to a main surface of a substrate on an interfacial portion between at least either a first non-single-crystalline semiconductor layer or a second non-single-crystalline semiconductor layer and the third non-single-crystalline semiconductor layer, and many of crystal grains contained in either semiconductor layer have major axes substantially parallel to the main surface of the substrate on the aforementioned interfacial portion.
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申请公布号 |
US7075052(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20030663663 |
申请日期 |
2003.09.17 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
SHIMA MASAKI;TAIRA SHIGEHARU |
分类号 |
H01L31/00;H01L31/04;H01L27/00;H01L31/036;H01L31/0368;H01L31/075 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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